离子层气相反应法(ILGAR)制备CuInS_2薄膜的研究  

Study on CuInS_2 Thin Films Grown by Ion Layer Gas Reaction (ILGAR) Me thod

作　　者：邱继军[1] 靳正国[1] 钱进文[1] 石勇[1] 武卫兵[1] 

机构地区：[1]天津大学材料学院先进陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《无机化学学报》2005年第3期399-404,共6页Chinese Journal of Inorganic Chemistry

基　　金：天津市重点基础研究项目(No.F103004)资助

摘　　要：CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuC1and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle on the properties of CuInS2 film were investigated. The chemical composition, crystalline structure, surface topography, deposited rate, optical and electronic properties of the films were characterized by X-ray diffractrometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), ultraviolet-visible spectrometry (UV-Vis) and Hall System. The results show that the crystalline of CuInS2 thin films and the deposition rate have been improved with the increase of cationic concentration, while CuxS segregation phases appear with further increasing cationic concentration. The deposition rate is close to constant as cationic concentration is fixed.CuInS2 thin film derived form lower cationic concentration is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS2 thin films is larger than 104 cm^-1, and the band gap Eg is in the range of 1.30-1.40 eV. The dark resisitivity of the thin film decreases from 50 to 10 Ω·cm and the carrier concentration ranges are over 10^16 cm^-3.CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuCl and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle on the prope rties of CuInS2 film were investigated. The chemical composition, crystalline st ructure, surface topography, deposited rate, optical and electronic properties o f the films were characterized by X-ray diffractrometry (XRD), X-ray photoelectr on spectroscopy (XPS), scanning electron microscopy (SEM), ultraviolet-visible s pectrometry (UV-Vis) and Hall System. The results show that the crystalline of C uInS2 thin films and the deposition rate have been improved with the increase of cationic concentration, while CuxS segregation phases appear with further incre asing cationic concentration. The deposition rate is close to constant as cation ic concentration is fixed. CuInS2 thin film derived form lower cationic concentr ation is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS2 thin films is larger than 104 cm-1, and the band gap Eg i s in the range of 1.30~1.40 eV. The dark resisitivity of the thin film decreases from 50 to 10 Ω·cm and the carrier concentration ranges are over 1016 cm-3.

关 键 词：NS2 C2H5OH XPS INCL3 离子 薄膜 UV-VIS XRD SEM 

分 类 号：O643[理学—物理化学] TP393[理学—化学]