部分空气桥式硅膜二维光子晶体  

Two-dimensional silicon-based photonic crystal slab with partial air-bridge

作　　者：田洁[1] 韩守振[1] 程丙英[1] 李志远[1] 冯帅[1] 张道中[1] 金爱子[2] 

机构地区：[1]中国科学院物理研究所和凝聚态物理中心光物理开放实验室,北京100080 [2]中国科学院物理研究所,微加工实验室,北京100080

出　　处：《物理学报》2005年第3期1218-1221,共4页Acta Physica Sinica

基　　金：国家重点基础研究发展规划项目 (批准号 :2 0 0 1CB610 40 2 );国家自然科学基金 (批准号 :60 3 45 0 0 8)资助的课题 .~~

摘　　要：描述在Si基底上制备带隙在近红外波段部分空气桥式二维光子晶体 (PC) .选用HF酸溶液作为腐蚀液 ,利用聚焦离子束刻蚀技术直接刻蚀出具有三角形空气洞结构的二维PC ,并测出了二维PC完整的第一带隙透过谱的带隙范围为 1 2 3— 1 5 5 μm .实验测得的透过谱与理论计算的空气桥式二维PC的计算结果一致 .类TM0 模的存在减小了带隙的宽度 .由于部分SiO2 支撑桥式平板 ,二维PC易于按所需尺寸进行制备 .同时 ,通过改变平板下的支撑材料 ,可以制出有源的PC ,利用这种机理可以把光从支撑材料中引出 .We describe the fabrication process of a two-dimensional silicon-based photonic crystal (PC) slab with partial air-bridge, which has a photonic band gap in the near-IR range. The process involves the formation of the air-bridge silicon slab by wet etching and the fabrication of periodic air holes by a focused ion beam. We successfully obtained such a sample and measured its transmission in a wide spectrum. It is found that the observed spectrum is consistent with the theoretical values calculated by the plane wave expansion method. The TM0-like modes reduce the size of the band gap, and the partial air bridge is beneficial to the fabrication of large PC slabs. Meanwhile, it is possible to draw light out from the supporting material of the air bridge.

关 键 词：带隙 二维光子晶体 近红外波段 透过谱 平板 理论计算 HF 桥式 刻蚀技术 聚焦离子束 

分 类 号：O734[理学—晶体学] TN722.75[电子电信—电路与系统]