PEN薄膜阻抗转变规律研究  

Study on impedance transition of PEN thin film

作　　者：郭峰[1] 蒋益明[1] 谢亨博[1] 万星拱[1] 胡敬平[1] 李劲[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《物理学报》2005年第3期1396-1399,共4页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :10 3 740 15 );国家重点基础研究发展规划项目 (批准号 :2 0 0 2CB613 5 0 4);上海市科学技术委员会专项基金 (批准号 :0 2 5 90 89)资助的课题~~

摘　　要：采用真空蒸发的方法制备了PEN材料薄膜 ,研究了不同外电路参数下薄膜的电双稳特性 .发现薄膜从高阻向低阻转变过程所需时间随电流非线性下降 ,此期间薄膜阻抗也呈现非线性 ,并对非线性规律作了数据拟合 .发现整个跃变过程中存在一种能量效应 ,即当外加电压超过某一阈值时 ,该跃迁所需的能量不变 .PEN films were prepared by vacuum deposition. Their electrical bistable properties were studied under conditions of various circuit parameters. A decrease of time needed for impedance transition with increasing circuit current was observed. The film impedance showed a nonlinear characteristics and then data fitting was done for the nonlinearity. Furthermore, an energy effect was found during the transition, i.e. when the applied voltage exceeds a threshold, the energy consumption keeps invariable.

关 键 词：薄膜 电双稳 非线性 跃迁 数据拟合 转变过程 能量 阻抗 跃变 高阻 

分 类 号：O484[理学—固体物理]