功率VDMOSFET与IGBT的最新结构与性能特点  

Structural and performance features of power VDMOSFET and IGBT with new structures

作　　者：金千男[1] 杜国同[1] 

机构地区：[1]吉林大学电子科学与工程学院,吉林长春130012

出　　处：《吉林大学学报（信息科学版）》2004年第6期549-552,共4页Journal of Jilin University（Information Science Edition）

摘　　要：综合评述了VDMOSFET(VerticalDoubleDiffusedMOSFET)与IGBT(InsulatedGateBipolarTransistor)的一般器件结构,分析比较了采用垂直沟槽栅极(Trenchgate)新结构的功率VDMOSFET与IGBT的结构与性能特点。新结构的VDMOSFET与IGBT能有效地减少原胞尺寸和增加沟道密度,具有大电流,高电压,开关频率高,高可靠性,低损耗的特点。在性能上明显优于目前广泛使用的VDMOSFET和IGBT结构。The VDMOSFET(Vertical Double Diffused MOSFET) and IGBT(Insulated Gate Bipolar Transistor) with conventional structure were reviewed.On the basis of the structure, the structural and performance features of power VDMOSFET and IGBT with new structure(trench gate) were analyzed and compared. This trench gate structure has small cell size and large channel density, it has characteristics of large current, high power, high voltage, high switch frequency, proven reliability, low losses and so on. The power VDMOSFET and IGBT with trench gate structure is obviously beyond prevalent power device-VDMOSFET, IGBT.

关 键 词：功率器件 功率MOSFET 绝缘栅双极晶体管 

分 类 号：TN323.4[电子电信—物理电子学]