纳米Bi_2O_3-Y_2O_3快离子导体的制备  

Preparation Process of Nanocrystalline Bi_2O_3-Y_2O_3 Fast Ionic Conductor

作　　者：甄强[1] 何伟明[1] 刘建强[1] 潘庆谊[2] 

机构地区：[1]上海大学材料学院 [2]上海大学理学院,上海200436

出　　处：《无机材料学报》2005年第2期393-400,共8页Journal of Inorganic Materials

基　　金：国家自然科学基金(20101006)

摘　　要：以共沉淀法制备的纳米(75mol％Bi2O3+25mol％Y2O3)混合粉体作为原料,通过无 压反应烧结工艺制备了纳米Bi2O3-Y2O3快离子导体.对烧结过程中高导电相(纳米δ-Bi2O3) 的形成规律研究表明:固溶反应发生在烧结过程的初期,在烧结过程中晶粒生长规律符合 (D-D0)2=K·t抛物线方程.用模式识别技术对δ-Bi2O3相生成的工艺条件进行优化的工艺 参数优化区为:Y>-1.846X+3.433(X=0.0059T+0.0101t,Y=-0.0059T+0.0101t,式中, T为烧结温度,t为烧结时间).在T=600℃,t=2h无压反应烧结条件下,纳米晶Bi2O3-Y2O3 快离子导体材料的相对密度可达96％以上,并且微观结构致密均匀,很少有残留气孔和裂纹, 平均晶粒尺寸在100nm以下.With nanometer (75mol%Bi2O3+25mol%Y2O3) powder prepared by coprecipitation as raw material, the nanocrystalline Bi2O3-Y2O3 fast ionic conductor was fabricated through pressureless reactive sintering technique. The study results on formation law of highly conductive phase (nano δ-Bi2O3) in the sintering process show that the solid solution reaction happens at the early stage of sintering process, and the grain growth accords with the rule of para-curve equation (D - D0)2 = K·t. The optimizing domain of sintering technique parameters forming δ-Bi2O3 was optimized by the pattern recognition technique, that is Y > -1.846X + 3.433(X = 0.0059T + 0.0101t, Y = -0.0059T+ 0.0101t, where T is sintering temperature, t is sintering time). At the pressureless reactive sintering conditions of T = 600℃, t=2h, the nanocrystalline Bi2O3Y2O3 fast ionic conductor can reach to a relative density of higher than 96%, and its microstructure is compact and homogeneous with few remaining pores or cracks, its average grain size is less than 100nm.

关 键 词：共沉淀法 无压反应烧结 纳米晶Bi2O3-Y2O3快离子导体 工艺优化 

分 类 号：O646[理学—物理化学]