SiC纳米晶薄膜的制备及发光性质研究  

Preparation and Photoluminescence of SiC Nanocrystal Films

作　　者：刘技文[1] 李娟[2] 赵燕平[3] 李延辉[2] 李昌龄[2] 许京军[1] 

机构地区：[1]南开大学物理学院,天津300071 [2]天津理工大学材料物理研究所,天津300191 [3]天津理工大学材料科学与工程学院,天津300191

出　　处：《光电子．激光》2005年第3期274-278,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(10074049);天津市自然科学基金资助项目(023801611)

摘　　要：用射频磁控溅射及后退火(800 ℃、1 000 ℃和1 200 ℃)方法,在Si(111)衬底上制备出了 SiC纳米晶(nc SiC)薄膜。傅立叶变换红外光谱(FTIR)、X射线衍射谱(XRD)及扫描电子显微镜(SEM)形貌像等研究表明,制备出的nc SiC薄膜具有立方结构;样品经 800 ℃、1 000 ℃退火后,表面的纳米晶粒分别为10 nm和20 nm左右;而1 200 ℃退火后,样品晶化完全。光致发光(PL)研究表明,nc SiC薄膜室温条件下发射蓝光,发光峰峰位随退火温度的降低发生蓝移且发光峰强度变大;1 000 ℃退火后样品的发光峰在478 nm,800 ℃退火后发光峰在477 nm,800 ℃退火比1 000 ℃退火的样品发光强度高4倍。SiC nanocrystal (nc-SiC) films were prepared on Si(111) substrates by RF magnetron sputtering and then annealed at 800°C, 1000°C and 1200°C for 30 min in a vacuum annealing system. The structure and crystallization of as-annealed SiC films were determined by Fourier transform infrared absorption(FTIR), X-ray diffraction (XRD) and the topography were observed by scanning electron microscopy (SEM).The results indicate that the nc-SiC structure is β-SiC and the annealing temperature affects the topography of the films and the size of nanocrystalline grains, which is 10 nm and 20 nm at 800°C and 1000 °C respectively, and the film is wholly crystallized at 1200°C. The measurement of photo-luminescence (PL) of the nc-SiC films show that blue light emits at room temperature, the PL peak shifts to short wavelength side and the PL intensity becomes stronger as the annealing temperature decreases.

关 键 词：SIC 射频磁控溅射 退火 纳米晶薄膜 光致发光 PL 

分 类 号：O484.1[理学—固体物理]