CZSiGe单晶的FTIR光谱研究  

FTIR spectroscopy of Ge-doped Czochralski Si

作　　者：蒋中伟[1] 张维连[1] 牛新环[1] 张书玉[1] 

机构地区：[1]河北工业大学半导体材料研究所,天津300130

出　　处：《功能材料与器件学报》2005年第1期23-27,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(No.59772037);河北省自然科学基金(No.500016)资助项目

摘　　要：利用傅立叶红外光谱(FTIR)测试技术,研究了掺锗CZSi的低温和常温红外吸收光谱。发现高浓度Ge掺入CZSi在红外吸收光谱中引起的波数为1118cm-1、710cm-1和800cm-1的新红外吸收峰,这些峰的吸收强度随Ge含量的增加也逐渐增强;碳的红外吸收峰(607cm-1)则向低频方向移动。同时利用X射线单晶衍射技术(SCXRD)测定了SiGe(Ge:10wt%)单晶的晶格常数,结果表明晶格常数由Si单晶的0.54305nm变为0.5446nm。SiGe single crystals with different concentrations of doping Ge in CZSi were measured by Fourier transform infrared spectroscopy (FTIR) at 300 K and 10 K. The results indicate that new peaks appear at wave number of 1118 cm-1, 710 cm-1 and 800 cm-1. The new peaks of the spectroscopy become clearer with increasement of Ge. The absorption peak of carbon shifts to low frequency side with increasement of Ge. The crystal data and structure refinement are obtained by single-crystal X-ray diffraction. The lattice constant of SiGe(Ge:10 wt% ) is 0.5446 nm.

关 键 词：CZ法 SiGe单晶 红外光谱 

分 类 号：TN305.2[电子电信—物理电子学]