纯氧高气压溅射PZT铁电薄膜  

PZT FERROELECTRIC THIN FILMS PREPARED BY SPUTTERING AT PURE OXYGEN AND HIGH PRESSURE

作　　者：曾亦可[1] 姜胜林[1] 邓传益[1] 陈实[1] 刘梅冬[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《硅酸盐学报》2005年第3期358-361,共4页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(90201028);"863"计划(2002AA325080;2003AA404150)资助项目

摘　　要：用Pb(Zr0.55Ti0.45)O3烧结陶瓷作为靶材,在纯氧、高气压溅射条件下成功地原位沉积了锆钛酸铅(leadzirconatetitanate,PZT)铁电 薄膜。为了弥补靶材在烧结过程中Pb的挥发及溅射成膜过程中发生Pb的损失,以PbO计,加入了质量分数为5.0%的过量Pb3O4。实验发 现:当最佳靶基片距离一定时,n(Pb)/n(Zr+Ti)成份偏析的比例随最佳靶基片距离偏差的增加而降低。PZT铁电薄膜的X射线衍射分析 表明,PZT铁电薄膜中存在PbO和钛锆固溶型氧化物,但无焦绿石相。PZT铁电薄膜的铁电性测量表明:剩余极化Pr达到14.1μc/cm2,矫顽 电场Ec较小,Ec与Pb(Zr0.55Ti0.45)O3烧结陶瓷靶材的值相当,其电滞回线具有很好的对称性。Lead zirconate titanate (PZT) ferroelectric thin films were deposited in situ on Pb(Zr0.55Ti0.45)O3 ceramic target at pure O2 and high pressure sputtering conditions. 5.0%(in mass) excessive Pb3O4 was added to the ceramic target materials for preventing Pb element volatilize during sintering and sputtering processes. Experimental results indicate that proportion of the segregation of n(Pb)/n(Zr+Ti) decreases with the increase of the difference for space ranging from the target to the substrate, when optimum ranging of the distance of the target to the substrate is definite. X-ray diffraction analysis shows that there are PbO and solid solution TZO (titanium zirconium oxides) phases in PZT ferroelectric thin films, but no hydrochlore phase. The electric property measurement indicates that the hysteresis loops are symmetry, and residue polarization Pr reaches to about 14.1 μc/cm2, while coercive field strength Ec is small, which is close to that of Pb(Zr0.55Ti0.45)O3 ceramic target.

关 键 词：锆钛酸铅 铁电薄膜 溅射 电滞回线 电流-电压特性 

分 类 号：O484[理学—固体物理] TN304.055[理学—物理]