超低压CMOS混频器比较设计及特性分析  

Analysis and Design of Very Low-Voltage CMOS Mixer

作　　者：魏莹辉[1] 朱樟明[1] 杨银堂[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《电子器件》2005年第1期114-117,121,共5页Chinese Journal of Electron Devices

摘　　要：讨论并设计了基于PMOS衬底驱动技术和 CMOS准浮栅技术的两种超低压 CMOS混频器电路,并对混频器的特性进行了比较分析。在电源电压为0.8 V,本征频率和射频频率分别是20 MHz、100 MHz和1 GHz、2.4 GHz的输入正弦信号时,衬底驱动混频器的转换增益为-17.95 dB和-8.5 dB,三阶输入截止点的值为 33.2 dB和 28.4 dB;在0.6 V的单电源电压下,输入正弦信号分别为频率为20 MHz、100 MHz和1 GHz、2.4 GHz时,准浮栅混频器的转换增益为-14.23 dB和-21.8 dB,三阶输入截止点的值为35.9 dB和34.6 dB。仿真结果比较显示,衬底驱动混频器具有更高的转换增益,而准浮栅混频器具有更好的频域特性和低压特性。而且它们在频率较低时的性能更好。The characteristics of bulk-driven PMOS and quasi-floating-gate CMOS were discussed. Based on those techniques, two very low-voltage CMOS Mixers core were developed. When the power supply is 0.8 V, the oscillation frequency is 20 MHz and 100 MHz, the radio frequency is 1 G and 2.4 G, the conversion gain of bulk-driven is-17.95 dB and-8.5 dB, the IIP3 of bulk-driven mixer is 33.2 dB and 28.4 dB. While the voltage is changed to 0.6 V, and other conditions are kept the same, the conversion gain of quasi-floating-gate mixer is-14.23 dB and-21.8 dB, IIP3 of quasi-floating-gate mixer is 35.9 dB and 34.6 dB. According to the simulation result, the bulk-driven mixer has larger conversion gain, the quasi-floating-gate mixer has better frequency domain specification and characters of low-voltage. The two mixer are more fit for the scope of low frequency.

关 键 词：超低压 准浮栅 衬底驱动 混频器 转换增益 频域特性 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN773