变磁场I-V法对碲镉汞光伏器件少子扩散特性的研究  

STUDY ON THE MINORITY CARRIER DIFFUSION CHARACTERISTIC OF HgCdTe DIODES BY I-V MEASUREMENT IN A VARIATIONAL MAGNETIC FIELD

作　　者：贾嘉[1] 陈新禹[1] 李向阳[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2005年第2期140-142,共3页Journal of Infrared and Millimeter Waves

基　　金：中国科学院国防科技创新基金(cxjj-72)资助项目

摘　　要：零偏压电阻 面积乘积(R0A)和反向饱和电流密度J0 是决定光电二极管性能的重要参数.提出了一种对碲镉汞(Hg1-xCdxTe)光伏器件的少子扩散特性进行研究的有效方法.利用变磁场下的电流 电压(I V)测试,得到了组分x在 0.5与 0.6之间的器件R0A和J0 随磁场强度B变化的函数关系.由实验结果估算得到了室温工作的短波红外(SWIR)碲镉汞光伏器件的少子扩散长度.其数值与用激光诱导电流(LBIC)方法得到的相一致.The zero-bias resistance area product (R(0)A) and the saturation current density J(0) are both key parameters to give an indication of photodiode performance. In this study, an effectual experimental method to study the minority carrier diffusion characteristics of Hg1-xCdxTe photodiodes was presented. By I-V tests in a variational magnetic field B, R,A and J, measurements were carried out as a function of B in the alloy composition range 0.5 < x < 0.6. Based on the test results, the minority carrier diffusion length of short wavelength infrared (SWIR) HgCdTe photodiodes operating at room temperature was calculated. The value is in agreement with the scale measured by laser beam induced current (LBIC) method.

关 键 词：碲镉汞光伏器件 扩散特性 V法 少子扩散长度 电流-电压 光电二极管 有效方法 电流密度 激光诱导 短波红外 函数关系 磁场强度 

分 类 号：TN215[电子电信—物理电子学] TK223[动力工程及工程热物理—动力机械及工程]