离子注入对二氧化锡薄膜的改性作用  

Modification of Tin Dioxide Thin Films by Ion Implantation

作　　者：辛督强[1] 朱民[1] 解延雷[1] 张涛[1] 

机构地区：[1]北京师范大学射线束技术与材料改性教育部重点实验室北京师范大学低能核物理研究所北京市辐射中心,北京100875

出　　处：《微细加工技术》2005年第1期17-21,共5页Microfabrication Technology

基　　金：北京市科技新星计划资助项目(952870400);国家863计划资助项目(2001AA338020-3);北京市自然科学基金资助项目(1002005)

摘　　要：对溅射沉积制成的氧化锡薄膜进行了钨离子注入、氧离子注入和退火处理,并用X射线衍射(XRD)和X射线光电子能谱(XPS)分析了薄膜,研究了注入对薄膜相变的影响。发现在室温下溅射沉积形成的非晶态SnO2薄膜,注入氧离子后导致了非晶态SnO2向晶态SnO2的转变;注入钨离子则导致了SnO在非晶态薄膜中的形成。而在已经注入了钨离子的薄膜中再注入氧离子可以形成Sn3O4。实验表明,注入钨离子可减少由氧和锡组成相的氧、锡比率,而注入氧离子则可增加这种比率。Tin oxide films prepared by sputtering deposition were subjected to W+, O+ implanting and annealing. XRD and XPS were used to characterize the films. The effects of implantation on the phase transform in the films were studied. Deposition by sputtering a SnO2 target at room temperature yields amorphous SnO2. O+ implantation induces a transform of the amorphous SnO2 into crystalline SnO2. W+ implantation induces SnO formation in the amorphous film. W+ implanted and then O+ implanted films show evidence of SnO4. The experiments indicate that W+ implantation decreases the O: Sn ratio of the phases composed of tin and oxygen in the film, while O+ implantation increases this ratio.

关 键 词：锡 离子注入 二氧化锡(SnO2) 

分 类 号：TN305.3[电子电信—物理电子学]