CaS:Ce,Sm的制备及性能表征  

Preparation and Characterization of CaS: Ce, Sm

作　　者：张希艳[1] 刘全生[1] 卢利平[1] 王晓春[1] 柏朝辉[1] 

机构地区：[1]长春理工大学材料与化工学院,长春130022

出　　处：《无机化学学报》2005年第5期665-668,共4页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金项目(No.50472027);武器装备重点基金(No.6140430)资助。

摘　　要：采用碳还原法制备了CaS:Ce,Sm样品,并研究了反应机理、还原原理以及灼烧温度对CaS晶格形成和光激励发光的影响。样品的XRD测试表明,采用碳还原法制备的CaS:Ce,Sm样品,具有纯CaS的面心立方结构,晶格常数a=0.5694nm,样品的激发光谱是峰值分别位于295nm和461nm的宽带谱,样品的荧光光谱是峰值位于503nm、560nm、600nm和655nm带谱,光激励发光光谱是峰值分别位于500nm,565nm和605nm的宽带谱,光激励激发光谱是峰值位于1150nm的宽带谱。CaS: Ce, Sm was prepared by carbon reduction method (CRM). Reaction mechanism, reduction principle and the effect of calcination temperature on lattice form and luminescence intensity were studied. XRD patterns indicated that the samples prepared by CRM were with face-center cubic structure and the lattice parameter was a=0.5694 nm. Excitation spectrum of sample was a broad-band spectrum peaking at 295 nm and 461 nm. Fluorescence spectrum of sample was a band spectrum with peaks at 503 nm, 560 nm, 600 nm and 655 nm respectively. The photo-stimulation luminescence spectrum was a broad-band spectrum with peaks at 500 nm, 565 nm and 605 nm respectively. Excitation spectrum of photo-stimulation luminescence was a broad-band at 1150 nm.

关 键 词：CAS Ce 性能表征 制备 SM 面心立方结构 碳还原法 激发光谱 光激励发光 XRD测试 宽带谱 反应机理 灼烧温度 荧光光谱 发光光谱 样品 峰值 常数 m带 

分 类 号：O122.7[理学—数学] TN949.197[理学—基础数学]