Cu^+离子注入α-Al_2O_3晶体的光吸收与荧光谱测量  

Optical Absorption and Luminescence Measurements of Cu^+ Ion Implanted α-Al2O3

作　　者：阳剑[1] 王春芬[1] 黄宁康[1] 邹萍[2] 汪德志[1] 

机构地区：[1]四川大学原子核科学技术研究所辐射物理及技术教育部重点实验室,成都610064 [2]四川大学分析测试中心,成都610064

出　　处：《四川大学学报（自然科学版）》2005年第2期315-319,共5页Journal of Sichuan University(Natural Science Edition)

基　　金：国家自然科学基金(10176016)

摘　　要：将注量为5×1016/cm2和能量为150～390keV的Cu+离子,在不同温度下注入αAl2O3单晶试样,并在还原气氛中进行不同温度下的热退火处理,然后对试样进行光吸收和荧光测量.测试结果表明,不同能量及不同温度条件下的Cu+离子注入不同晶向的αAl2O3晶体后,均发现该晶体在紫外可见光区域发生强吸收,而经退火后吸收强度大幅度下降.通过对光吸收谱进行高斯拟合以及荧光谱分析确认,Cu+离子注入蓝宝石晶体产生的点缺陷主要为F心,F+心,F2+心和F2+2等阴离子空位缺陷.Specimens of α-Al2O3 crystals with different orientations were implanted by Cu+ with a dose of 5×10(16) ions/cm2 and energy ranging from 150 to 390keV at different temperature, then annealed in Ar+ atmosphere at different temperature. Optical absorption and luminescence analyses for these specimens were studied. The results show that there is a strong absorption at ultraviolet-visible light area for all of the specimens and its intensity decreases after annealing. The absorption curves have been evaluated by Gaussian fitting, which been confirmed by luminescence measurements. It is found that there were point defects, such as F, F+, F2+ and F2(2+)-type center in the Cu+ ion implanted sapphire crystals.

关 键 词：离子注入 α-A12O3晶体 光吸收 荧光谱 

分 类 号：TG174.4[金属学及工艺—金属表面处理] O433.5[金属学及工艺—金属学]