在GaAs(100)衬底上离化团束外延ZnSe单晶薄膜  

EPITAXY OF ZnSe SINGLE CRYSTAL FILMS ON GaAs(100) WITH IONIZED CLUSTER BEAM DEPOSITION TECHNIQUE

作　　者：张芳伟 冯嘉猷[1] 郑毅 范毓殿[1] 

机构地区：[1]清华大学材料科学与工程系,北京100084

出　　处：《真空科学与技术》1994年第6期405-410,共6页Vacuum Science and Technology

摘　　要：ZnSe是一种理想的蓝紫色发光材料，用于制作发光器件有较大的应用前景，采用单源喷发、离化原子团束（ICB）技术在GaAs（100）上外延ZnSe单晶薄膜，并用电子能谱分析了外延薄膜的成分。用X射线衍射和RHEED研究了外延ZnSe单晶薄膜结构和外延质量。研究了淀积能量和衬底温度对薄膜质量的影响。得到了摆动曲线半高宽为133rad·s，并具有原子水平平整程度的ZnSe（100）单晶薄膜。外延薄膜存在0．2～0．4μm的应变过渡层，过渡层随淀积能量的增大而变薄。ZnSe is a promising material for blue-or-violet-light-emitting devices. Studies on epitaxy of ZnSe single crystal films on GaAs (100) with ionized cluster beam deposition technique were reported. Single vaporating source was used in deposition. SEM,XRD and RHEED were used to analize the epilayer of ZnSe single crystal. Influences of deposition energy and substrate temperature on the quality of ZnSe films were studied. A signle crystal ZnSe film with atom-flatness was obtained,of which the FWHM of XRD rocking curve was 133 rad·s. There were 0．2to 0．4 μm strain layers in the epitaxial films. The strain layers became thinner corresponding to the increase of depostion energy.

关 键 词：硒化锌 薄膜沉积 外延 离化团束 

分 类 号：TN304.055[电子电信—物理电子学] TN304.055