氩环境气压对激光烧蚀沉积纳米硅薄膜形貌的影响  

Influence of Ambient Gas Pressure on Morphology of nc-Si Film Deposited by Pulsed Laser Ablation in Argon

作　　者：闫常瑜[1] 周阳[1] 褚立志[1] 武德起[1] 王晓菲[1] 王英龙[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2005年第1期29-32,共4页Journal of Hebei University(Natural Science Edition)

基　　金：河北省自然科学基金资助项目(500084;503125)

摘　　要：采用脉冲激光烧蚀技术在氩气环境下制备了纳米硅薄膜,研究了环境气体压强对纳米硅薄膜表面形貌的影响.结果表明,当环境气压小于50Pa时,薄膜表现为常规的量子点镶嵌结构;当环境气压大于50Pa时,薄膜中出现类网状的絮结构,继续增大氩气压,絮结构逐渐增大,且其隙度增大.指出该现象与在激光烧蚀过程中纳米硅团簇的形成过程有关.In argon (Ar) gas, nanocrystalline silicon films are prepared by pulsed laser ablation. The influence of ambient pressure on surface morphology of nanocrystalline silicon film is studied. The results show that quantum dots inserted into the films are obtained when the pressure is lower than 50 Pa, which is the ordinary microstructure; Web_like aggregation of particles is formed when the ambient pressure is higher than 50 Pa; With the ambient pressure increasing further ,web_like aggregation enlarge and its porosity increase. This phenomenon is related to the peculiarities of the clusters formation during the laser_ablation process.

关 键 词：脉冲激光烧蚀 纳米硅 形貌 

分 类 号：O78[理学—晶体学]