Compact Threshold Voltage Model for FinFETs  

FinFET器件的集约阈电压模型(英文)

作　　者：张大伟[1] 田立林[1] 余志平[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2005年第4期667-671,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2003AA1Z1370)~~

摘　　要：A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is performed to calculate the threshold voltage.The analysis results in a modified gate capacitance with a coefficient H introduced to model the effect of tri-gates and its asymptotic behavior in 2D is that for double-gate MOSFET.The potential profile obtained analytically at the cross-section agrees well with numerical simulations.A compact threshold voltage model for FinFET,comprising quantum mechanical effects,is then proposed.It is concluded that both gate capacitance and threshold voltage will increase with a decreased height,or a decreased gate-oxide thickness of the top gate,which is a trend in FinFET design.对FinFET器件(或称三栅MOSFET器件)的二维截面做了解析静电学分析以得出阈电压的计算公式.结果显示,由于三栅结构在高度方向的限制作用,需要引入一个H系数来修正栅电容,随着高度不断变大,它渐近于双栅MOSFET器件的情况.由该解析模型得出的电势分布与数值模拟结果吻合.提出了一个包含量子效应的Fin FET器件的集约阈电压模型,结果表明,当高度或者顶栅的氧化层厚度变小时,栅电容及阈电压都会上升,这与FinFET设计时发现的趋势是相符合的.

关 键 词：FINFET 2D analytical electrostatic analysis compact model threshold voltage 

分 类 号：TN304.02[电子电信—物理电子学]