RHEED振荡精确测量AlGaAs生长速率研究  

Study on Accuracy of AIGaAs Growth Rates Using RHEED Oscillations

作　　者：李林[1] 钟景昌[1] 张宝顺[1] 王勇[1] 卢鹏[1] 王晓华[1] 刘国军[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《光电子技术与信息》2005年第2期50-52,共3页Optoelectronic Technology & Information

基　　金：国家自然科学基金(60306004)资助

摘　　要：采用分子束外延技术,在GaAs衬底上生长GaAs,AlAs和AlGaAs时,实现RHEED图像和RHEED强度振荡的实时监测已被证明是一种有效工具。通过RHEED可讨论GaAs表面结构和生长机制,并可以估算衬底温度,更重要的是能计算出材料的生长速率。RHEED强度振荡周期决定生长速率,每一个周期对应一个单层。实验测量GaAs的生长周期为0.82s,每秒沉积1.22单分子层,AlAs的生长周期为2.35s,每秒沉积0.43单分子层。The use of reflection high-energy electron diffraction (RHEED) intensity oscillations has proven to be a powerful tool to understand growth mechanisms of GaAs, AlAs and AlGaAs in molecular beam epitaxy (MBE). RHEED may be used to study the GaAs surface structure and may be used to approximate the substrate temperature. Under suitable conditions oscillations in the intensity of certain features of the RHEED pattern may be observed, but one important feature is the close relationship between the RHEED intensity oscillations and the growth rate of their films. The growth rate is determined from the period of intensity oscillations, each period corresponds to one monolayer deposition. One RHEED oscillation of GaAs and AlAs takes 0.82 s and 2.35 s, respectively, therefore 1.22 and 0.43 monolayers per second deposited.

关 键 词：反射式高能电子衍射仪 分子束外延 半导体材料 

分 类 号：TN304.07[电子电信—物理电子学]