基于发光机理提高掺铒硅基材料发光效率的几条途径  

Several routes towards high luminescence efficiency of Er-doped Si-based materials based on the luminescence mechanism

作　　者：李延辉[1] 刘技文[2] 赵燕平[2] 李昌龄[1] 李娟[1] 

机构地区：[1]天津理工大学材料物理研究所,天津300191 [2]天津理工大学材料科学与工程学院,天津300191

出　　处：《物理》2005年第4期293-299,共7页Physics

基　　金：国家自然科学基金(批准号:10074049);天津市自然科学基金(批准号:023801611)资助项目

摘　　要：掺铒硅基发光材料可以用于制备光通信用光源、光纤放大器,更重要的是可能成为实现硅基光电子集成技术的重要途径,已成为研究的热点之一.文章讨论了掺铒硅及掺铒硅基材料的发光机理,指出了制约实用化方面存在的问题.从不同方面着重探讨了共掺氧对提高掺铒硅发光效率的作用.最后介绍了基于掺铒硅发光机理提高掺铒硅基材料发光效率的几种途径、目前存在的主要问题及研究进展.Er-doped Si-based light emitting materials have important potential applications in light sources for optical communication and fiber amplifiers. Erbium doping has recently emerged as a promising route towards Si-based optoelectronic integration. In this paper the luminescence mechanism of Er-doped silicon and several factors hampering its industrial applications, as well as the role of O when co-doped with Er, are discussed. Several methods to increase the luminescence efficiency, various problems and new developments are reviewed.

关 键 词：发光效率 硅基材料 发光机理 硅基发光材料 光纤放大器 掺铒硅 集成技术 研究进展 光电子 实用化 掺氧 

分 类 号：TB381[一般工业技术—材料科学与工程]