n/p沟道MOSFET1/f噪声的统一模型  

A unified model for 1/f noise in n-channel and p-channel MOSFETs

作　　者：包军林[1] 庄奕琪[1] 杜磊[1] 李伟华[1] 万长兴[1] 张萍[1] 

机构地区：[1]宽禁带半导体材料与器件教育部重点实验室,西安电子科技大学微电子研究所,西安710071

出　　处：《物理学报》2005年第5期2118-2122,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :60 2 760 2 8) ;国防预研基金 (批准号 :5 14 110 40 60 1DZ0 14 ) ;国防科技重点实验室基金 (批准号 :5 14 3 3 0 3 0 10 3DZ0 1)资助的课题 .~~

摘　　要：对n/p两种沟道类型、不同沟道尺寸MOSFET的 1/f噪声特性进行了实验和理论研究 .实验结果表明 ,虽然nMOSFET的 1/f噪声幅值比pMOSFET大一个数量级 ,但是其噪声幅值均表现出和有效栅压的平方成反比、和漏压的平方成正比、和沟道面积成反比的规律 .基于该实验结果 ,认为MOSFET的 1 f噪声产生机理为位于半导体_氧化物界面附近几个纳米范围内的氧化层陷阱通过俘获和发射过程与沟道交换载流子 ,在引起载流子数涨落的同时也通过库仑散射导致沟道载流子迁移率的涨落 .在这两种涨落机理的基础上 ,引入了氧化层陷阱的分布特征及其与沟道交换载流子的隧穿和热激活两种方式 ,建立了MOSFETl/f噪声的统一模型 .实验结果和本文模型符合良好 .1/f noise in n-channel and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) with different channel areas, are studied in theory and experiment. Experimental results demonstrate that the 1/f noise magnitude in n-channel MOSFETs is ten times than that in p-channel MOSFETs, but both magnitudes are all in inverse proportion to the power of effective gate voltage and its active area, while they are in direct proportion to the power of drain voltage. Based on these experimental results, the mechanisms are discussed that the 1/f noise in MOSFETs is attributed to the random trapping/detrapping processes between channel and oxide traps near the SiO2-Si interface about several nanometers, which cause fluctuations in both the number and the mobility of channel carriers. Based on these mechanisms, a unified 1/f noise model for MOSFETs is developed, including tunneling and thermal activation through which traps communicate carriers with channel. Experimental results agree well with the developed model.

关 键 词：噪声幅值 氧化层陷阱 有效栅压 半导体 载流子 

分 类 号：TN384[电子电信—物理电子学]