立方相β-GaN纳米晶的气相化学反应制备研究  

Synthesis of β-GaN nanocrystals with a cubic structure by gas_phase chemical reaction

作　　者：方鲲[1] 高善民[2] 邱海林[1] 曹传宝[1] 朱鹤孙[1] 

机构地区：[1]北京理工大学材料科学研究中心 [2]烟台师范学院化学与材料科学学院,烟台264025

出　　处：《物理学报》2005年第5期2267-2271,共5页Acta Physica Sinica

基　　金：高校博士点研究基金 (批准号 ;2 0 0 2 0 0 0 70 2 9)资助的课题 .~~

摘　　要：在氮气氛中 ,以GaP纳米晶为原料 ,在相对较低的反应温度下 ,通过N P取代的气相化学反应制备立方相 β GaN纳米晶 .这是由于GaP纳米晶具有较大的比表面积和表面众多的空位键 ,使之具有较高的反应活性造成的 .不同升温速率造成不同的化学反应机理 ,从而生成不同形貌的 β- GaN纳米晶材料 .β-GaN nanocrystalline have been successfully synthesized from the nitridation of GaP nanocrystalline at low temperatures by gas-phase chemical reaction. The starting GaP nanocrystalline has a large specific surface and a high reactivity that can reduce remarkably the difficulty of nitridation. The results of GaP nanocrystalline in N2 at different heating rates support the fact that β-GaN nanocrystalline can form in GaP nanocrystalline via N-P metathesis gas-phase chemical mechanism. The mechanism is different when different heating rate was used. This method is very simple and is used generally to synthesize β-GaN nanoparticles or nanorods.

关 键 词：氮化镓 立方相 纳米晶 气相化学反应 制备工艺 

分 类 号：TB383[一般工业技术—材料科学与工程]