紫外激光作用下四甲基硅的MPI光谱和TOF质谱研究  

UV Laser MPI Spectra and TOF Mass Spectra of Tetramethylsilane

作　　者：施德恒 熊永建 陆庆正 余枝广 马兴孝[1] 孔繁敖[1] 

机构地区：[1]空军第一航空学院基础部,信阳师范学院物理系,中国科技大学近代化学系,中国科学院化学研究所

出　　处：《中国激光》1994年第1期44-48,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金

摘　　要：本文利用平行板电极装置及飞行时间质谱仪相结合的方法对四甲基硅进行了多光子电离（ＭＰＩ）光谱及飞行时间（ＴＯＦ）质谱的研究。得到了激光激发波长在３８３～３７３ｎｍ内的多光子电离光谱，获得了某些波长点处的飞行时间质谱，并据此讨论了该分子可能的ＭＰＩ机理。It was studied that the MPI spectra and the TOF mass spectra of tetramethylsilanewith parallel plate vacuum cell and supersonic molecular beam system with UV laserradiation in the wavelength range of 383￣373 um.In experiments,seven strong peaks ofMPI spectra were gumed but only three were assigned to(2+1)ionization of St atoms.TOF mass spectra showed that Si+ and constantly appeared.A general conclusion wasgumed that the MPI machanism of tetramethylsilane was class B photochemical process.

关 键 词：四甲基硅 多光子电离 光化学行为 

分 类 号：O613.7[理学—无机化学]