用LPE研制的室温连续工作的1．48μm单量子阱激光器  

Room Temperature CW Single Quantum Well Laser at 1.48 μmFabricated by Liquid Phase Epitaxy

作　　者：杨志坚[1] 党小忠 陈娓兮[1] 王舒民[1] 章蓓[1] 陈高庭 

机构地区：[1]北京大学物理系,中国科学院上海光机所

出　　处：《中国激光》1994年第1期1-4,共4页Chinese Journal of Lasers

摘　　要：利用液相外延（ＬＰＥ）技术研制出室温连续工作的ＩｎＧａＡｓＰ／ＩｎＰ分别限制单量子阶（ＳＣＨ－ＳＱＷ）双沟平面掩埋（ＤＣ－ＰＢＨ）激光器。室温下，腔面未镀膜的激光器最低阈值电流为２３ｍＡ（激光器腔长为２００μｍ，ＣＷ，１３℃）。激射波长为１．４８μｍ，最高输出功率达１８．８ｍＷ（Ｌ＝２００μｍ．ＣＷ，１８℃）。脉冲输出峰值功率大于５０ｍＷ（脉冲宽度１μｓ、频率１ｋＨｚ），未见功率饱和。量子阱的阱宽为２０ｎｍ［１］．We have successfully fabricated the room temperature CW InGAsP/InPseparated confinement single quantum well(SQW)DC-PBH laser at 1.48 μm by liquidphase epitaxy for the first time in our country.The lowest threshold current at roomtemperature is 23 mA for the cavity length of 200 μm The highest CW output power is18.8 mW per facet without mirror coating.The power saturation doesn't occur yet whilethe pulsed output power is higher than 50 mW.The thicknesses of active layer andtransition layer in quantum well are 20 nm and 3 nm,respectively.

关 键 词：液相外延 半导体激光器 量子阱 

分 类 号：TN248.4[电子电信—物理电子学]