Nd:LuVO_4晶体缺陷的研究  

Study on the Growth Defects in Nd:LuVO_4 Crystal

作　　者：马丽丽[1] 胡小波[1] 张怀金[1] 王继扬[1] 赵守仁[1] 田玉莲[2] 朱佩平[2] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]中国科学院北京高能物理研究所同步辐射实验室,北京100039

出　　处：《人工晶体学报》2005年第2期238-241,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No. 60025409)资助项目

摘　　要：采用提拉法生长的Nd:LuVO4 晶体是一种适合二极管泵浦的新型激光晶体,运用化学腐蚀结合光学显微术和同步辐射白光X射线形貌术对Nd:LuVO4 晶体缺陷进行观察,结果表明:晶体的主要缺陷为位错和小角晶界。利用高分辨X射线衍射仪进一步验证了这一结果。并初步讨论了缺陷形成的原因。A new laser crystal Nd:LuVO4 was grown by Czochralski method. The growth defects in the Nd:LuVO4 crystals were observed by optical microscopy combined with white-beam synchrotron radiation topography. It is shown that the main growth defects in the Nd:LuVO4 crystals are dislocations and low-angle grain boundaries. The result was confirmed furthermore by high resolution X-ray diffractometry. In addition, the formation mechanisms of these defects in Nd:LuVO4 crystal were discussed.

关 键 词：Nd:LuVO4晶体 缺陷分析 同步辐射白光X射线形貌术 小角晶界 激光性质 化学腐蚀法 

分 类 号：O77[理学—晶体学]