Temperature Characteristics of BJMOSFET  

作　　者：ZENGYun YANMin YANGHong-guan GAOYun 

机构地区：[1]InstituteofMicroelectronics,HunanUniversity,Changsha410082,CHN

出　　处：《Semiconductor Photonics and Technology》2005年第2期89-93,共5页半导体光子学与技术（英文版）

摘　　要：The resolution expression for the temperature dependence of the current and threshold voltage is deduced as well as the analysis of temperature characteristics of BJMOSFET. Equivalent circuit of analysis and simulation has been established for the BJMOSFET temperature characteristics. By using the general circuit simulation software of PSpice9 and computer simulation, characteristic graphs of the BJMOSFET output characteristic, transient characteristic and amplitude-frequency characteristic with temperature variation are obtained. The results accorded very good with theoretical analysis and proved that BJMOSFET has better temperature characteristics than traditional MOSFET.The resolution expression for the temperature dependence of the current andthreshold voltage is deduced as well as the analysis of temperature characteristics of BJMOSFET.Equivalent circuit of analysis and simulation has been established for the BJMOSFET temperaturecharacteristics. By using the general circuit simulation software of PSpice9 and computersimulation, characteristic graphs of the BJMOSFET output characteristic, transient characteristicand amplitude-frequency characteristic with temperature variation are obtained. The results accordedvery good with theoretical analysis and proved that BJMOSFET has better temperature characteristicsthan traditional MOSFET.

关 键 词：BJMOSFET temperature characteristic ANALYSIS SIMULATION 

分 类 号：TN322.8[电子电信—物理电子学]