用于RF无源器件的氧化多孔硅隔离层技术  

OPS insulating techniques for RF passive devices

作　　者：陈忠民[1] 刘泽文[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《清华大学学报（自然科学版）》2005年第4期561-564,共4页Journal of Tsinghua University(Science and Technology)

基　　金：国家"九七三"重点基础研究项目(G1999033105)

摘　　要：为了提高片上射频(RF)无源器件的性能,可以利用氧化多孔硅厚膜隔离硅衬底来降低硅衬底的高频损耗。通过采用SerenadeSV建模对共面波导传输性能的分析,计算了不同厚度的氧化多孔硅隔离层硅衬底的损耗。结果表明氧化多孔硅(OPS)隔离层能够极大地降低硅衬底在高频条件下的损耗。实验制备过程中采用电化学阳极氧化法在n+衬底上制备了多孔硅厚膜,继而将孔隙度大于56%的多孔硅样品利用两步氧化法氧化为氧化多孔硅厚膜,有效地解决制备过程中的隆起失效和崩裂失效问题。测量了多孔硅的生长速率和氧化多孔硅的表面形貌。制作了一个氧化多孔硅隔离层上的5nH的Cu平面电感,在2.4GHz时电感的品质因数(Q值)超过了6。The performance of on-chip RF passive devices is improved with the oxidized porous Silicon (OPS) insulating technique to reduce high frequency losses in silicon substrates. The insertion loss of coplanar waveguides was analyzed using the Serenade SV tool to compare the insulating performance of different thickness OPS layers. Insulation of silicon substrates by an OPS layer effectively reduces high frequency losses to improve the performance of silicon-based RF passive devices. The OPS layers are prepared by two-step oxidation of porous Silicon (PS) with porosities greater than 56% selectively formed on n^+ substrate by the anodization method. The OPS layers effectively reduce protrusions and cracks in the silicon substrate. The formation rates of the PS and OPS morphologies were measured with SEM and AFM. A copper planar inductor was then fabricated on an OPS insulating layer with an inductance of 5 nHand a Q factor greater than 6 at 2.4 GHz.

关 键 词：氧化多孔硅技术 电感 多孔硅 射频器件 损耗 

分 类 号：TN305[电子电信—物理电子学]