纳米级高压扫描电子束曝光技术  

High Voltage Scanning Electron Beam Lithography for Nanostructure

作　　者：彭开武[1] 田丰[1] 

机构地区：[1]中国科学院电工研究所,北京100080

出　　处：《微纳电子技术》2005年第5期244-248,共5页Micronanoelectronic Technology

摘　　要：通过简单添加一些附件,将一台带有扫描附件的商用透射电子显微镜改造为一台高压扫描电子束曝光机,以研究高压下高分辨率、高深宽比抗蚀剂图形曝光及邻近效应的影响。重点介绍了如何获得一个高分辨率的电子光学系统,并利用此系统初步进行了曝光实验,在120nm厚的PMMA胶上获得了53nm线宽的抗蚀剂图形,表明此装置可用于纳米图形的制作。A commercial transmission electron microscope with a scanning attachment has been modified for use as a nanolithography by adding some attachments so that some experiments such as testing proximity effect,exposuring high resolution and aspect ratio resist pattern. It is introduced in detail how to attain a high qualify of electron optical system. By using this system to carry out some exposure experiments,we have obtained 53 nm pitch in 120 nm thick PMMA resist,suggesting this equipment is suitable for nanostructure-making.

关 键 词：高压扫描电子束曝光机 纳米图形 透射电子显微镜 

分 类 号：TN405[电子电信—微电子学与固体电子学]