国外GaAs光电阴极光谱响应特性比较与分析  

Compare and Analysis of Spectral Response Characteristics of Foreign GaAs Photocathodes

作　　者：杜玉杰[1] 杜晓晴[1] 常本康[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院

出　　处：《红外技术》2005年第3期254-256,共3页Infrared Technology

基　　金：国防"十五"重点预研项目(NO.404050501D);演示验证项目资助课题

摘　　要：对国外标准三代、高性能三代、超三代和四代GaAs光电阴极进行了光谱响应曲线比较。结果显示,GaAs光电阴极的积分灵敏度、响应的截止波长、峰值响应和峰值位置存在明显差异。曲线拟合结果表明国外GaAs光电阴极的后界面复合速率较低,表面逸出几率和电子扩散长度从标准三代到四代不断提高,这些性能的改善导致了GaAs光电阴极灵敏度的提高。The spectral response curves of foreign standard Gen III, high performance Gen III, super Gen III and Gen IV GaAs photocathodes had been compared.There are obvious differences of integral sensitivity, response cut-off wavelength, peak response value and peak position among these photocathodes. The curve simulation results showed that foreign GaAs photocathodes have low interface recombination velocity, and surface escape probability and electron diffusion length have been improving from standard Gen III to Gen IV, which led to increase of sensitivity the GaAs photocathodes.

关 键 词：光电阴极 GAAS 光谱响应 特性比较 国外标准 曲线比较 截止波长 峰值响应 复合速率 曲线拟合 扩散长度 灵敏度 三代 性能 

分 类 号：TN203[电子电信—物理电子学] TN304.23