特型二氧化钒薄膜的制备及电阻温度系数的研究  

Preparation and TCR Characterization of VO_2(B) Thin Films

作　　者：尚东[1] 林理彬[1] 何捷[1] 王静[1] 卢勇[1] 

机构地区：[1]四川大学物理科学与技术学院,成都610064

出　　处：《四川大学学报（自然科学版）》2005年第3期523-527,共5页Journal of Sichuan University(Natural Science Edition)

摘　　要：采用真空蒸发真空退火的制备工艺,制备出了特定的VO2(B)型薄膜并给出了最佳制备条件,经X射线衍射(XRD)分析及电学参数测试,其电阻温度系数(TCR)值达到-3.4×10-2K-1,无相变和热滞现象.作者还讨论了薄膜电阻温度关系,及其电阻温度系数与晶粒大小、激活能等的关系.The specified thin films of VO_2(B) are prepared by vacuum evaporation and vacuum annealing method, and the optimal condition of preparation are showed here. X-ray diffraction (XRD) is used to analyze the phase and element valance state of the thin films. The temperature coefficient of resistance(TCR) of thin films are (-2.5～-3.4)×10^(-2)K^(-1), and there do not exist hysteresis and phase transition in the thin films of VO_2(B). The relationship between the resistance of films and the temperature, as well as between the activation energy ΔE and TCR, have also been discussed.

关 键 词：VO2(B)薄膜 真空蒸发 真空退火 

分 类 号：O484[理学—固体物理]