A Novel Local-Dielectric-Thickening Technique for Performance Improvements of Spiral Inductors on Si Substrates  

一种用以改善硅衬底螺旋电感性能的局域介质增厚新技术(英文)

作　　者：杨荣[1] 李俊峰[1] 赵玉印[1] 柴淑敏[1] 韩郑生[1] 钱鹤[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2005年第5期857-861,共5页半导体学报（英文版）

基　　金：国家高技术研究与发展计划资助项目(批准号:2002AA1Z1580)~~

摘　　要：A novel local-dielectric-thickening technique i s presented for performance improvements of Si-based spiral inductors.This technique employs the processes of deposition,photolithography,and wet-etching,to locally thicken the oxide layer under the inductor,which can decrease the substrate loss and improve the inductor performance.Both the structures and processes are compact,economical,and compatible with CMOS processing.Several square spiral inductors with different inductances are fabricated,and the quality factors and the self-resonant frequencies both increase clearly with this proposed technique:for the 10nH,5nH,and 2nH inductors,the peak quality factors are effectively improved by 46.7%,49.7%,and 68.6%,respectively;however,the improvement percents of the self-resonant frequencies are more significant,which are 92.1%,91.0%,and no less than 68.1% respectively.提出了一种用于提高硅基螺旋电感性能的局部介质增厚技术.这种技术通过淀积、光刻和湿法腐蚀工艺,局部增加电感下方的氧化层厚度,以降低衬底损耗和提高电感性能.所采用的结构及工艺简单、成本低廉,与CMOS工艺兼容良好.用这种技术制作的几种不同电感量的方形螺旋电感、品质因数和自谐振频率均显著提高.10nH,5nH和2nH的电感,品质因数的峰值分别提高了46. 7%,49. 7%和68 .6%;而自谐振频率的改善更明显,分别达到了92. 1%,91 0.%及不低于68 .1%.

关 键 词：SILICON INDUCTOR structure process quality factor self-resonant frequency 

分 类 号：TN304[电子电信—物理电子学]