(100)定向CVD金刚石薄膜的制备及其电学性能  

Growth and Electrical Properties of (100)-Oriented CVD Diamond Films

作　　者：苏青峰[1] 夏义本[1] 王林军[1] 张明龙[1] 楼燕燕[1] 顾蓓蓓[1] 史伟民[1] 

机构地区：[1]上海大学材料科学与工程学院电子信息材料系,上海200072

出　　处：《Journal of Semiconductors》2005年第5期947-951,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60277024);上海市纳米专项基金(批准号:0452nm051);上海应用材料研究与发展基金;上海市教育委员会"材料学"重点学科资助项目~~

摘　　要：报道了采用HFCVD制备金刚石薄膜的方法,以乙醇为碳源,氢气为载气,在适当的衬底温度下,合成出具有(100)晶面取向均匀生长的金刚石薄膜.SEM,XRD和Raman分析表明,所合成的金刚石薄膜是高质量的多晶(100)取向膜,厚度均匀、化学性能稳定,结构和性能与天然金刚石相接近.研究了室温下(100)取向金刚石薄膜的暗电流电压特性、稳态55Fe 5. 9keV X射线辐照下的响应和电容频率特性.结果表明,退火后(100)取向多晶金刚石薄膜具有较低的暗电流和较高的X射线响应;高频下,电容和介电损耗都很小且趋于稳定,不随频率的变化而变化.High quality (100)-oriented diamond films prepar ed by hot filament chemical vapor deposition (HFCVD) using alcohol carried by hydrogen are reported.The surface morphology and microstructure of the films are characterized by scan electron microscopy,X-ray diffraction,and Raman spectrometer.It indicates that diamond films are high quality CVD diamond films with a high-intensity peak around 120° and 1332cm -1 ,respectively.Dark I-V characteristics,C-F characteristics and photocurrent under steady-state 55 Fe 5.9keV X-ray excitation of CVD diamond films are investigated at room temperature.Results indicate that after post-annealing for (100)-oriented CVD diamond films,dark current is very low with a value of 10 -10 A at the applied voltage of 40V,and electrical responses to X-ray is high,capacitance and dielectric loss are very small and almost have no variation with the change of frequency in high frequencies.

关 键 词：金刚石薄膜 HFCVD (100)定向生长 电学特性 

分 类 号：TN304[电子电信—物理电子学]