一种简化的VBIC模型和InGaP/GaAs HBT宽带放大器设计  

A Simplified VBIC Model and InGaP/GaAs HBT Wideband Amplifier Design

作　　者：孙玲玲[1] 刘军[1] 

机构地区：[1]杭州电子科技大学微电子CAD研究所,杭州310018

出　　处：《Journal of Semiconductors》2005年第5期994-998,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:90207007)~~

摘　　要：采用一种新的简化VBIC模型对单、多指InGaP/GaAs HBT器件进行建模.测量和模型仿真I -V特性及其在多偏置条件下多频率点S 参数对比结果表明,DC^9GHz频率范围内,简化后的模型可对InGaP/GaAsHBT交流小信号特性进行较好的表征.利用建立的模型设计出DC^9GHz两级直接耦合宽带放大器,该放大器增益达到19dB,输入、输出回波损耗分别低于-10dB和-8dB.A new simplified VBIC model for a single- or a multi-finger InGaP/GaAs HBT is presented.Compared results between measured and simulated data verify that,within the frequency range from 50MHz to 9GHz,this simplified model is suitable for InGaP/GaAs HBT AC small-signal characterizations’ representation.Using this model developed,a two-stage direct-coupled wideband amplifier has been designed with measured gain of 19dB up to 9GHz,the input return-loss of less than -10dB, the output return-loss of less than -8dB.

关 键 词：简化VBIC模型 INGAP/GAAS HBT 宽带放大器 

分 类 号：TN722[电子电信—电路与系统]