考虑缺陷形状分布的IC成品率模型  

Yield Modeling of IC Based on Distribution of Defect Shapes

作　　者：王俊平[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2005年第5期1054-1058,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2003AA1Z1630)~~

摘　　要：实现了基于圆缺陷模型的蒙特卡洛关键面积及成品率估计,模拟了圆缺陷模型估计的成品率误差与缺陷的矩形度之间的关系,提出了更具有一般性的两种集成电路成品率模型,它们分别对应于矩形度相同和不同的缺陷.仿真结果表明该模型为成品率的精确表征提供了新途径.Yield prediction models and critical area calcu lation are based on defects modeled as circular disks.But the observation of real defects exhibits a great variety of shapes.For this reason,the yield and the critical area predictions by Monte-Carlo techniques are realized,the relation between estimation error of circular defect and the rectangular degree of the defect is simulated and two more general models are first developed to evaluate the functional yield in integrated circuit,which correspond to the same rectangle degrees and the various rectangle degrees of defects,respectively.The simulation results show that the new models can be used to estimate yield of IC in a more accurate way.

关 键 词：真实缺陷 形状分布 圆缺陷模型 成品率模型 

分 类 号：TN405[电子电信—微电子学与固体电子学]