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作 者:端木庆铎[1] 姜德龙[1] 田景全[1] 李野[1] 高延军[1] 王国政[1] 吴奎[1] 富丽晨[1]
机构地区:[1]长春理工大学,吉林长春130022
出 处:《电子学报》2005年第5期904-907,共4页Acta Electronica Sinica
摘 要: 文中介绍了微光像管中微通道板电子透射膜及其形成技术,研究了粒子(电子和离子)透过特性.给出了死电压概念、死电压曲线、死电压与膜厚关系曲线以及半视场对比测试结果;给出了采用XPS进行成分分析的结果.介绍了电子透射膜的离子透过特性,给出了表征膜层对离子阻止能力的离子透过率的概念,提出了离子透过率测试的原理方案和相关技术等问题.The MCP electron transmission film in low-level-light imaging tube and its process techniques were introduced in this paper. The electron and ion transmittance of this film was studied. The concept of dead voltage of MCP with film was discussed. The dead voltage curve, and the relation between dead voltage and thickness of film were tested. The results of performance testing comparisons were presented. The composition of film was analyzed by XPS. Through theoretical analysis of ion transmittance characteristics for MCP electron transmission film, we proposed the concept characterized the inhibition ability of film from ion transmitting, testing theorem and related techniques for ion transmittance measuring.
关 键 词:微通道板 电子透射膜 免污染成膜工艺 死电压 离子透过率
分 类 号:TN304[电子电信—物理电子学]
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