a-Si:H薄膜的再结晶技术及Si膜的Raman光谱分析  

Recrystallization Technology of a-Si:H Thin Films and Raman Spectra Analysis of Si Thin Films

作　　者：冯团辉[1] 张宇翔[1] 王海燕[1] 靳瑞敏[1] 卢景霄[1] 

机构地区：[1]郑州大学教育部材料物理重点实验室,河南郑州450052

出　　处：《材料科学与工程学报》2005年第3期462-465,共4页Journal of Materials Science and Engineering

基　　金：河南省自然科学基金资助项目 (0 0 4 0 4 0 2 0 0)

摘　　要：论述了非晶硅薄膜的几种主要再结晶技术 ,着重指出了各种晶化技术已取得的研究成果、优缺点、有待进一步研究的内容及其在多晶硅薄膜太阳电池工业生产中的应用前景。另外 ,还讨论了通过Raman光谱求纳晶硅薄膜的晶粒尺寸和结晶度的方法。Several basic recrystallization techniques of a-Si:H thin films were introduced and discussed. The emphasis was putted on the research results achieved, the advantage and disadvantage of various recrystallization techniques ,the contents that will be further studied and the application probability of them in the industry productivity of polysilicon thin-film solar cells. In addition, the method of calculating the grain size and crystalline fraction of nanoscale silicon thin films through Raman spectrum was discussed.

关 键 词：非晶硅薄膜 再结晶技术 多晶硅薄膜太阳电池 RAMAN光谱 晶粒尺寸 结晶度 

分 类 号：O484.1[理学—固体物理]