Cd掺杂Zn0阵列纳米梳子  

Cd-doped ZnO Nanocantilever Arrays

作　　者：周少敏[1] 

机构地区：[1]中国科学院北京物理和化学技术研究所有机电子发光和纳米器件研究室,5100信箱北京100101

出　　处：《零陵学院学报》2004年第6期53-57,共5页

基　　金：this project was financially supprted by the Chinesc.Academy of Sciences(CAS),P.R.China,CAS-Croucher Funding Schemne for Joint Laboratories;China Posdoctoral.Science Foundation(No.2004035111).

摘　　要：作者采用Zn+Cd粉,制得了大量阵列Cd掺杂ZnO纳米梳子。这些纳米梳子通过X-射线衍射仪(XRD)、X-射线光电子能谱仪(XPS)、透射电子显微镜(TEM)、X-射线能量损失谱仪(EDS)、选区电子衍射仪(SAED)及高分辨透射电子显微镜(HRTEM)来分析其形貌和宏、微观结构。结果显示这些纳米梳子的臂直径为15-50 nm、臂长为400 nm,它们都有单晶的结构及相应的生长机制为传统的气固生长机制。I demonstrate bulk synthesis of highly crystalline Cd-doped ZnO nanocantilever arrays (CZNAs) using Cd and Zn powders, which is characterized via powder X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), selected area electron diffraction (SAED), high resolution TEM (HRTEM). The results show that the as-prepared CZNAs have diameters of about 15-50 nm, and lengths up to 400 nm with single crystal phase where the corresponding process of growth is suggested for conventional vapor solid (VS) mechanism.

关 键 词：II-VI族半导体 Cd掺杂 纳米结构 ZnO阵列 

分 类 号：O63[理学—高分子化学]