大规模集成电路中子和γ射线综合电离辐照效应研究  

Synthetical ionization irradiation effects of neutron and γ-ray on very large scale integrated circuit

作　　者：徐天容[1] 杨怀民[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《强激光与粒子束》2005年第5期756-760,共5页High Power Laser and Particle Beams

摘　　要：研究了反应堆中子和γ射线综合辐照环境下CMOS工艺大规模集成电路的电离辐照效应。通过对80C196KC20和PSD501B1两种不同芯片在该环境下开展综合辐照试验,发现总的静态电流增长不明显。对试验结果综合分析得出在反应堆的综合辐照环境下,中子电离效应较弱,并且由于中子位移效应引起载流子迁移率降低和载流子浓度降低,使得总的静态电流下降,从而抵消中子和γ射线综合电离导致的静态电流增长。The ionization irradiation effects were researched on very large scale integrated circuits (VLSI) made with CMOS technique under the neutron and γ-ray synthetical irradiation environment of a reactor. Through the experiments of the synthetical irradiation effects on different 80C196KC20 and PSD501B1 SCM (single chip microprocessor) system chips, it was found that the static current did not increase apparently. The conclusion is that under the neutron and γ-ray synthetical irradiation environment of a reactor, ionization effects of neutron on the VLSI made with CMOS technology are weak, and that the displacement effects of neutron induces the decreases of mobility ratio and density of charge carrier, which causes the decrease of the total static current, so it compensates the increase of the static current caused by the synthetical ionization effects of neutron and γ-ray.

关 键 词：单片机系统芯片 中子 射线 电离辐照效应 

分 类 号：TN47[电子电信—微电子学与固体电子学]