热处理温度对PST铁电薄膜微结构的影响  

Effect of heat treat temperature on the microstructure of PbSc_(0.5) Ta_ (0.5)O_3 ferroelectric thin films

作　　者：曾亦可[1] 胡勇[1] 肖腊连[1] 李秀峰[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《华中科技大学学报（自然科学版）》2005年第6期92-94,共3页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金重大研究计划资助项目(90201028);国家高技术发展研究计划新材料领域资助项目(2002AA325080);先进制造与自动化技术领域资助项目(2003AA404150).

摘　　要：以Pb(OOCCH3)2·3H2O,Sc(OOCCH3)3·xH2O和Ta(OC2H5)5为原材料,用SolGel方法在Pt/Ti/SO2/Si(100)基片上成功地制备出厚度达1.5μm,无裂纹的PbSc0.5Ta0.5O3(PST)铁电薄膜.对(220)主晶向生长的PST薄膜分别在10～20min、650～800℃范围内进行热处理,结果表明:热处理温度在750℃时,PST薄膜转变为较为完整的ABO3型钙钛矿晶相结构,更高的温度将提高晶粒在(220)方向的取向度.实验发现,最佳热处理条件应为750℃×15min,该条件下制备的PST铁电薄膜呈蓝黑色,表面光亮.Crack-free PbSc_ 0.5 Ta_ 0.5 O_3 (PST) ferroelectric thin films with 1.5μm-thick were fabricated by Sol-Gel process onto Pt/Ti/SiO_2/Si (1 0 0) substrates. Pb (OOCCH_3)_2·3H_2O, Sc(OOCCH_3)_3·xH_2O and Ta (OC_2H_5)_5 were used as raw materials. The highly (2 2 0)-oriented PST films were annealed at various times and temperatures, ranging from 10 to 20min and 650 to 800℃, respectively. The results showed that PST films annealed at 750℃ have crystallized into ABO_3 perovskite phase. The level of (2 2 0) crystallization has been improved with increased annealing temperature. The experiment results also revealed that the best heat treat condition is 750℃×15min, PST ferroelectric thin films prepared in this condition present shining surface with blue black.

关 键 词：铁电薄膜 溶胶-凝胶 热释电性 

分 类 号：TN304[电子电信—物理电子学]