用离子注入和掩埋金属自对准技术改善Si/SiGe HBT性能  

Improving the Performances of Si/SiGe HBT via Ion Implantation and Buried Metal Self-Aligned Technology

作　　者：杨维明[1] 史辰[1] 徐晨[1] 陈建新[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100022

出　　处：《电子器件》2005年第2期245-247,393,共4页Chinese Journal of Electron Devices

基　　金：北京市自然科学基金资助项目(4032005)

摘　　要：在器件纵向结构确定后,常规工艺制作的SiGe/SiHBT噪声性能不理想的主要原因是其基极电阻较大,高频性能不理想主要是由于其基极和发射极台面面积较大造成的;为达到改善其高频与低噪声性能的目的,在不改变光刻工艺精度的情况下,采用离子注入和掩埋金属自对准工艺方法完成了器件制作;与传统制作方法相比,前者可减小外基区电阻,后者可以减小电极接触电阻,并能使器件的台面面积做得更小。在此基础上,我们测试了器件的最小噪声系数与最高截止频率,结果表明:用自对准工艺制作的器件的高频噪声与频率性能都显著改善。After the longitudinal structure of Si/SiGe HBT is determined, the bad noise performance is mainly caused by the high base resistance of the device, and the large mesa area of base or emitter leads to the poor frequency characteristics. In order to improve the noise and frequency features, both the ion implantation and the buried metal self-aligned technique were used during the fabrication procedure. Compared to the traditional fabrication, ion implantation can reduce the extrinsic base resistance, the buried metal self-aligned technique can decrease the contact resistance of the electrode lead and reduce the area of the electrode mesa. Basing on this, the minimum noise figure and the cut off frequency of the Si/SiGe HBT were tested. The results indicate that the noise performance and frequency performance of the device are improved apparently than before.

关 键 词：离子注入 掩埋金属自对准 HBT 噪声系数 

分 类 号：TN305[电子电信—物理电子学] TN385