室温红外探测器研究与进展  

Research and Development of Uncooled Infrared Detectors

作　　者：刘兴明[1] 韩琳[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《电子器件》2005年第2期415-420,431,共7页Chinese Journal of Electron Devices

摘　　要：简要概述了室温红外探测器技术的最新研究现状,首先根据工作机理的不同对红外探测器进行了分类,详细阐述了室温红外探测器的优点所在;接着在给出了室温红外探测器典型结构的基础上,对这些典型结构进行了比较和讨论;给出了最近出现的几种新型探测器,介绍了其工作原理、制作工艺和主要性能指标;最后对室温红外探测器的发展方向进行了预测。The latest research status of uncooled infrared detectors is reviewed. The infrared detectors are classified according to the different operation principle, and the merit of uncooled infrared detectors is particularly described. The typical detector structures are presented, compared and discussed. This paper describes the primary structures, technology and elementary indicators of several new detectors, and the development orientation of uncooled infrared detectors is predicted.

关 键 词：室温红外探测器 测辐射热计 热释电 标准CMOS工艺 薄膜晶体管 

分 类 号：TN215[电子电信—物理电子学]