自旋对表面磁极化子能量距离特性的影响  

Influence of Spin on the Distance Properties of Energy of a Surface Magnetopolaron

作　　者：李子军[1] 李岗[1] 

机构地区：[1]烟台大学光电学院,山东烟台264005

出　　处：《固体电子学研究与进展》2005年第2期143-147,共5页Research & Progress of SSE

基　　金：山东省自然科学基金(批准号:Y2003A01)资助课题

摘　　要：在磁场为40T和考虑电子自旋的情况下,应用线性组合算符、变分和微扰法给出了半无限TlBr晶体内表面磁极化子能量与z(到晶体表面距离)之间的关系。电子自旋能量与电子和LO(体纵光学)声子之间的相互作用能之比以及与声子之间的相互作用能之比都随z增加而减小。电子自旋能量与电子和SO(表面光学)声子之间的相互作用能之比随z增加而增加。在z=0.5nm处,电子自旋能量与极化子的有效能量之比达到极大值,该比值在z<0.5nm范围随z增加而增加,在z>0.5nm范围随z增加而减小。这一结果对设计和研制自旋电子器件(如自旋场效应晶体管,自旋发光二极管和自旋共振隧道器件等)具有参考价值。Using the linear combination operators and calculus of variations and perturbation methods yielded the relationship between energy of surface magnetopolaron and z(distance to crystal surface) considering electron spin in semi-infinite TlBr crystal at 40 T. The ratio of electron spin energy to the interaction energy between electron and LO(longitudinal optical) phonon decreases with increasing z, so does the ratio of electron spin energy to the interaction energy between polarons. The ratio of electron spin energy to the interaction energy between electron and SO(surface optical) phonon increases with increasing z. The ratio of electron spin energy to effective energy of polaron reaches a maximum at z=0.5 nm, while it increases with increasing z when z<0.5 nm and decreases with increasing z when z>0.5 nm. Designing and developing spintronic devices (such as spin field effect transistor, spin light-emitting diode, spin resonant tunneling device etc.) can reference the results.

关 键 词：TLBR 电子自旋 表面磁极化子 能量的距离特性 

分 类 号：O471[理学—半导体物理] O481[理学—物理]