超薄HfO_2高K栅介质薄膜的软击穿特性  

Soft Breakdown Characteristics of Ultra-thin High-K HfO_2 Gate Dielectrics

作　　者：韩德栋[1] 康晋锋[1] 杨红[1] 韩汝琦[1] 

机构地区：[1]北京大学微电子所,北京100871

出　　处：《固体电子学研究与进展》2005年第2期157-159,共3页Research & Progress of SSE

基　　金：国家重点基础研究专项经费资助项目(合同号:G20000365)

摘　　要：研究了高K(高介电常数)栅介质HfO2薄膜的制备工艺,制备了有效氧化层厚度为2.9nm的超薄MOS电容。当栅氧化层很薄时会发生软击穿现象,软击穿和通常的硬击穿是不同的现象。分别利用在栅介质上加恒流应力和恒压应力两种方法研究了HfO2薄膜的击穿特性,实验结果表明,在两种应力方式下HfO2栅介质均发生了软击穿现象,软击穿和硬击穿的机理不同。Ultra-thin HfO_2gate dielectrics films were fabricated by ion beam sputtering a sintered HfO_2 target. Soft breakdown characteristics of gate dielectrics were studied. Results show that soft breakdown of HfO_2gate dielectrics happened both under constant voltage stress and constant current stress. These results have been analyzed and discussed.

关 键 词：高介电常数栅介质 二氧化铪薄膜 软击穿 

分 类 号：TN304.055[电子电信—物理电子学]