100 nm分辨率交替式移相掩模设计  

The Research on Alternating Phase-shifted Mask Design of 100 nm Resolution

作　　者：陆晶[1] 陈宝钦[1] 刘明[1] 龙世兵[1] 李泠[1] 

机构地区：[1]中国科学院微电子所纳米加工与新器件集成技术实验室,北京100029

出　　处：《固体电子学研究与进展》2005年第2期260-264,共5页Research & Progress of SSE

基　　金：获国家自然基金支持(自然基金号60376020)

摘　　要：讨论了100nm分辨率交替式移相掩模设计中的关键问题,以及通过对版图的拓扑分析,建立自动化的解决相位冲突的各种方法。通过比较,确立了分层叠加曝光的方案,并针对分层叠加曝光技术,进行了100nm节点中分层技术中两种关键图形的模拟。得出了分层叠加曝光在100nm技术节点中也可以实现的结论。Phase-shift mask(PSM) technology is a strong candidate for practically enhancing the resolution of optical lithography, but there are still some problems in shifter assignment and placement. Proper change of layout on the basis of topography anlysis is one method to eliminate the phase conflict. Another method is to decompose the original design pattern into several alternating PSM sub-patterns based on geometrical rules and multiple-exposure of these sub-masks. Optical effect correction(OPC) is also useful to improve the resolution. The integrated of AltPSM and OPC will push the printable feature dimensions to the level of 100 nm with optical lithography.

关 键 词：交替式移相掩模 相位冲突 光学临近效应校正 

分 类 号：TN305.7[电子电信—物理电子学]