p型透明导电的锡镓氧化物薄膜的制备及其表征  

Preparation and Characterization of p-type Transparent Conductive Tin-gallium Oxide Films

作　　者：季振国[1] 陈琛[1] 王超[1] 周强[1] 赵丽娜[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《真空科学与技术学报》2005年第2期93-95,99,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基础研究专项(G2000068306);国家高技术研究发展计划(2003AA3A19/1);浙江省分析测试基金(03103)资助项目

摘　　要：本文通过磁控溅射锡镓合金靶(Ga/Sn=0.2)及热氧化的方法,成功地制备了p型透明导电的锡镓氧化物(TGO)薄膜。X射线衍射(XRD)测试结果表明,TGO薄膜保持SnO2的金红石结构。吸收谱测试表明TGO薄膜在可见光范围内透过率可达到85%以上,其光学禁带宽度Eg约3.8eV。霍尔效应测试结果表明,TGO薄膜的载流子类型及其浓度与热处理温度密切相关。热氧化温度过高或过低均不利于空穴浓度。当热氧化温度处于(600～700)℃之间时,可以获得p型透明导电的TGO薄膜,最高空穴浓度高达8.84×1018cm-3。p-type transparent conductive tin-gallium-oxide (TGO) films were successfully prepared on quartz substrates by magnetron sputtering of GaSn alloy (Ga/Sn = 0.2), followed by thermal oxidization. X-ray diffraction results show that TGO films are of rutile structure. UV-visible absorption results show that the optical band-gap of the TGO films is 3.8 eV approximately, and the transmittance of the films is higher than 85% in the visible region. Hall effect measurement shows that hole concentration as high as 8.84 × 1018 cm-3 is achieved, but both the carrier type and the carrier concentration depend on the process temperature.

关 键 词：透明导电 氧化物薄膜 P型 制备 表征 镓 锡 光学禁带宽度 空穴浓度 X射线衍射 金红石结构 热处理温度 磁控溅射 SnO2 霍尔效应 温度过高 氧化温度 热氧化 合金靶 测试 透过率 可见光 吸收谱 子类型 

分 类 号：O484.1[理学—固体物理] TN304.055[理学—物理]