低功率消耗、响应快速的SOI基可变光学衰减器  

SOI-based Variable Optical Attenuator with Low Power Consumption and Fast Response

作　　者：贺月娇[1] 方青[1] 辛红丽[1] 陈鹏[1] 李芳[1] 刘育梁[1] 

机构地区：[1]中国科学院半导体研究所,光电子研究发展中心,北京100083

出　　处：《光电子．激光》2005年第6期642-645,共4页Journal of Optoelectronics·Laser

基　　金：国家"863"计划资助项目(2001AA312250)

摘　　要：采用绝缘体上Si(SOI)材料制作了马赫曾德干涉型(MZI)SOI热光可变光学衰减器(VOA),利用隔热槽有效降低器件的功率消耗,提高响应速度。在1510～1610nm波长范围内动态调节范围可达到0～29dB。与未加隔热槽的相同结构光学衰减器相比,器件插入损耗和调制深度不受影响。最大衰减(29dB)时功率消耗由360mW降低为130mW,器件响应速度提高1倍,响应时间由大于100μs降为小于50μs。A silicon-on-insulator (SOI)-based thermo-optic variable optical attenuator (VOA) with the type of a Mach-Zehnder interferometer (MZI) and multimode-interference coupler was fabricated. By introducing U-shaped thermal isolation grooves on both sides of the MZI modulating arms to improve heating efficiency, the power consumption at the maximum modulation depth is reduced and the response frequency is doubled. Modulation depth of 29 dB in the wavelength range 1510 nm to 1610 nm is achieved. Compared with the variable optical attenuator without thermal isolation grooves, the maximum power consumption decreases from 360 mW to 130 mW and the response time decreases from about 100 μs to less than 50 μs, while the insertion loss is not affected.

关 键 词：功率消耗 衰减器 光学 可变 SOI 响应速度 马赫-曾德 调节范围 波长范围 调制深度 插入损耗 响应时间 干涉型 绝缘体 器件 隔热 

分 类 号：TN715[电子电信—电路与系统] O43[机械工程—光学工程]