氮-铟共掺杂ZnO薄膜的制备及表征  

Growth and Characterization of N-In Codoped ZnO Films Deposited on Glass Substrates

作　　者：边继明[1] 李效民[1] 张灿云[1] 赵俊亮[1] 于伟东[1] 高向东[1] 

机构地区：[1]中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海200050

出　　处：《液晶与显示》2005年第3期200-204,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家"973"基金资助项目(No.2002CB613306);上海市科技发展基金资助项目(No.022261035)

摘　　要：以醋酸锌水溶液为前驱体,分别以醋酸铵和硝酸铟为氮(N)源和铟(In)源,采用超声喷雾热解法在石英玻璃衬底上沉积了氮铟(NIn)共掺杂ZnO薄膜。采用X射线衍射、场发射扫描电镜、霍尔效应、塞贝克效应、光致发光谱等分析方法,研究了NIn共掺杂对所得ZnO薄膜的晶体结构、电学和光学性能的影响规律。结果表明:通过氮铟共掺杂,ZnO薄膜的电学和光学性能发生明显改变。优化工艺条件下,所得ZnO基薄膜结构均匀致密,电阻率为6.75×103Ω·cm,并且在室温光致发光谱中检测到很强的近带边紫外发光峰,表明薄膜具有较理想的化学计量比和较高的光学质量。N-In codoped zinc oxide films were deposited on quartz glass substrates by ultrasonic spray pyro-lysis (USP) technology. CH_3COONH_4 and In(NO_3)_3 were used as the sources of N and In, respectively. The effect of N-In codoping and depositing temperature on structural and optical properties of ZnO films was studied by using X-ray diffraction (XRD), field emission scanning electron microscopy (SEM) and photoluminescence spectra measurements. It is found that structural and electrical properties of ZnO thin films change dramatically due to N-In codoping, and all films show n-type conduction at present deposition condition. Resistivity of ZnO thin films decreases with the increase of depositing temperatures in the range of 300℃ to 500 ℃. In photoluminescence (PL) measurements, a strong (ultraviolet) emission centered at 380 nm and relatively weak green emission band were observed, providing evidence of the high optical quality and well stoichiometry of the obtained N-In codoped ZnO films.

关 键 词：ZNO薄膜 超声喷雾热分解 N—In共掺杂 光致发光 

分 类 号：O484.4[理学—固体物理]