热丝对微波ECRCVD方法制备的a-Si:H薄膜氢含量的影响  

Effect of Hot Wire on the Hydrogen Content of a-Si∶H Films Prepared by Microwave ECR CVD Technique

作　　者：李瀛[1] 陈光华[1] 朱秀红[1] 胡跃辉[1] 宋雪梅[1] 

机构地区：[1]北京工业大学新型功能材料教育部重点实验室,北京100022

出　　处：《液晶与显示》2005年第3期225-228,共4页Chinese Journal of Liquid Crystals and Displays

基　　金：国家重点基础研究发展计划"973"资助项目(No.G20000282011)

摘　　要：采用微波ECRCVD系统制备了aSi∶H薄膜,对比有无热丝辅助情况下薄膜的生长情况,并通过红外光谱测试进行氢含量分析。aSi∶H薄膜中氢的引入对薄膜的光学、电学性能有着极大的影响,它可以钝化非晶硅薄膜中大量存在的悬挂键,降低薄膜的缺陷密度,从而显著提高薄膜稳定性。通过对沉积速率的研究发现,在有热丝辅助的情况下沉积速率明显提高,可达3nm/s。实验证明,高温的热丝提高了工作气体的分解率,从而提高了薄膜的沉积速率。此外,在有热丝辅助的条件下制备出薄膜样品比没有热丝辅助条件下制备出的薄膜样品的氢含量低而且稳定性有了较大的改进。Hydrogenated amorphous silicon (a-Si∶H) is a technologically important material which has been widely applied to devices as diverse as solar cells, flat panel displays and image scanners.The introduction of hydrogen into the a-Si∶H films plays an important role in their optical and electricity performances. It can passivate the dangling bond which has great content in a-Si∶H films, decrease the density of defects, and improve the stability of the films. Therefore, the study of hydrogen content is a key issue on the film analysis. In this paper, the a-Si∶H films deposited by hot wire assisted (microwave) ECR CVD method was compared with those without hot wire assisted. The differences between them were examined by Fourier transform infrared (FTIR) spectroscopy. It shows that the films deposited by hot wire assisted microwave ECR CVD have high deposition rate about 3 nm/s, low hydrogen content and improved stability.

关 键 词：氢化非晶硅 微波ECR CVD沉积速率 氢含量 

分 类 号：TN304.055[电子电信—物理电子学] O484.4[理学—固体物理]