量子干涉效应在红外探测器能带结构设计中的应用  

Application of the quantum interference effect in designing energy band structure of the infrared photodetector

作　　者：连洁[1] 王青圃[1] 程兴奎[2] 张飒飒[1] 姜军[3] 张瑞峰[1] 周均铭[4] 黄绮[4] 

机构地区：[1]山东大学信息科学与工程学院,山东济南250100 [2]山东大学物理与微电子学院,山东济南250100 [3]青岛大学机电工程学院,山东青岛266000 [4]中国科学院物理研究所,北京100080

出　　处：《红外与激光工程》2005年第3期272-276,共5页Infrared and Laser Engineering

基　　金：国家自然科学基金资助项目(69976016);教育部博士点研究基金资助项目(20020422048);山东省中青年科学家奖励基金项目(2004BS01007)

摘　　要：利用量子干涉效应,提出设计GaAs/AlxGa1-xAs量子阱红外探测器能带结构的方法。此法比K-P方法简便易行,而且随着势垒宽度的增加,两种方法所得结果趋于一致。这表明新方法更适合计算具有较宽势垒超晶格的电子态。另外,用新方法对超晶格样品的光电流谱进行了分析,所得结果比K-P方法更接近实验值。由此证实了量子干涉效应引起的电子能态的存在和新方法在量子阱红外探测器能带结构设计中的实用性。The electronic states of GaAs/AlxGa1-xAs superlattices are calculated by the quantum interference effect. Compared with the K-P method, it is found that the results of two methods are accordance with the increase of the barrier width. This indicates the new method is suitable for calculating the electronic states of superlattice with the wider barrier, and is easier to manipulate than the K-P method. In addition, the photocurrent spectrum of superlattice sample is analyzed by two methods. As a result, the data given by the new method is closer to the experimental results than that by the K-P method. This confirms that the electronic states caused by the quantum interference effect exist in superlattice, and the new method can be applied to design energy band structure of the infrared photodetector.

关 键 词：红外探测器 超晶格材料 量子干涉效应 K-P方法 能带结构 

分 类 号：TN215[电子电信—物理电子学]