二氧化钒薄膜的退火组分变化及光学特性研究  

Appealing component changes and optical properties of VO_2 thin films

作　　者：田雪松[1] 刘金成[1] 掌蕴东[1] 鲁建业[1] 王骐[1] 

机构地区：[1]哈尔滨工业大学光电子技术研究所,哈尔滨150001

出　　处：《激光技术》2005年第3期332-333,336,共3页Laser Technology

摘　　要：为得到高纯度的VO2薄膜,对其制备参数进行了探索。VO2薄膜用磁控溅射法制备。对不同条件下制备的VO2薄膜用X射线电子能谱仪(XPS)测试,并通过拟合来得到3,4,5价钒在薄膜中所占的比例。为提高4价钒的含量对薄膜进行了退火处理,分析了退火对氧化钒薄膜中4价钒含量的影响。结果表明,VO2薄膜对10.6μm激光的透过率从60℃时的74%变到78℃时的11.93%,发生了相变。Preperation parameters are studied to get highly pure vanadium dioxide thin films.VO2 thin films are deposited by magnetron sputteri ng methods.VO2 thin films prepared in different conditions are studied by mean s of X-ray photoelectron spectroscopy (XPS), constituents of the V^(3+),V~ (4+) and V^(5+) in the film are gotten by fitting the XPS peaks with 100% G uassian like curves.Then the thin films are annealed to increase the percentages of the V^(4+), the effect of annealing is analyzed.The transmittance at 10.6 μm changed from 74% at 60℃ to 11.93% at 74℃, semiconductor-to-metal phase t ransition occurs.

关 键 词：激光防护 相变 磁控溅射 二氧化钒 

分 类 号：TN305.8[电子电信—物理电子学]