气态源分子束外延1.3μm VCSEL器件结构  

1.3μm vertical-cavity surface-emitting laser structure grown by GSMBE

作　　者：刘成[1] 吴惠桢[1] 劳燕锋[1] 黄占超[1] 曹萌[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《功能材料与器件学报》2005年第2期173-176,191,共5页Journal of Functional Materials and Devices

基　　金：973项目(No.2003CB314903)

摘　　要：采用气态源分子束外延(GSMBE)技术在InP(100)衬底上生长了InAsP/InGaAsP应变补偿量子阱为有源层和InP/InGaAsP分布布拉格反射镜(DBR)为上、下腔镜的垂直腔面发射激光器(VCSEL)结构。通过湿法刻蚀和聚酰亚胺隔离工艺制作出了1.3μmVCSEL,器件在室温下可连续单模激射,阈值电流约为4mA。实验测得的VCSEL结构反射光谱包括高反射带和腔模等参数与传递矩阵法拟合的反射光谱相符合;边发射电致发光谱的增益峰与腔模位置一致。A vertical-cavity surface-emitting laser (VCSEL) structure which employs InAsP/InGaAsP strain-compensated multiple quantum wells and InP/InGaAsP distributed Bragg reflector (DBR) mirrors were grown by gas-source molecular-beam epitaxy (GSMBE) on InP(100) substrates. 1.3 μm VCSEL were fabricated by wet etching and polyimide isolation techniques. The device demonstrates continuous-wave single-mode operation at room temperature and threshold current of about 4 mA. The stop band and cavity mode measured are in good agreement with simulation. The gain peak position measured from edge-emitting electroluminescence accords with the cavity mode position.

关 键 词：垂直腔面发射激光器 气态源分子束外延 光电特性 

分 类 号：TN248.4[电子电信—物理电子学]