N^+和N_2^+离子注入硅的材料性能研究  

Research of material function after implanting Si with N^+ and N_2^+

作　　者：王国全[1] 解英艳[2] 

机构地区：[1]沈阳大学基础部,辽宁沈阳110044 [2]大连大学建筑工程学院,辽宁大连116622

出　　处：《大连大学学报》2005年第2期14-16,57,共4页Journal of Dalian University

摘　　要：本文应用X射线衍射方法、红外光谱分析方法、扩展电阻测量方法研究了N+和N+2注入硅的应变、损伤度、扩展电阻率随注入剂量、注入深度变化的规律,形成Si3N4非晶层的条件.建立了多层的物理模型和胁变函数的数学模型,利用计算机和曲线拟合等手段,得出了合理的结论.In this paper, the regularity of the changed dosage and the depth of strain, the injury layer, the spreading resistance when N^(+)and N^+_2 were pouring into Si, were investigated. And the forming condition of Si_(3)N_(4)amorphous layer was also studied. The X-ray diffraction method, as well as the analytical method of infrared absorption, together with the measurement of spreading resistance was used. A physical multi-layered model and a mathematical model of strain function had been set up. By use of the computer and the curve fitting method, some rational conclusions were drawn.

关 键 词：损伤层 扩展电阻 N^+ N2^+ 离子注入硅 材料性能 红外光谱分析 胁变函数 

分 类 号：O613.72[理学—无机化学] TB32[理学—化学]